In this study, a 2-D explicit analytical drain current model for junctionless tunneling field effect transistor (J-TFET) is proposed. The potential profile is found by solving the Poisson’s equation. From the potential model, the electric field is derived and is utilized to extract the expression for the drain current by analytically integrating the band to band tunneling generation rate over the tunneling region. The proposed model predicts the transfer (IDS-VGS) and the output characteristics (IDS-VDS) of the J-TFET with a good accuracy. The validity of the developed model is examined by 2-D simulation results and quite excellent agreement is achieved.
